Optical and magnetic properties for erbium-related centers in self-assembled silicon nanostructures

Nikolai T. Bagraev; Alexei D. Bouravleuv; Wolfgang Gehlhoff; Leonid E. Klyachkin; Anna M. Malyarenko; Margarita M. Mezdrogina; Alexander Naeser; Vladimir V. Romanov; Serguei A. Rykov

doi:10.1117/12.375415

25 January 2000 Optical and magnetic properties for erbium-related centers in self-assembled silicon nanostructures

Nikolai T. Bagraev, Alexei D. Bouravleuv, Wolfgang Gehlhoff, Leonid E. Klyachkin, Anna M. Malyarenko, Margarita M. Mezdrogina, Alexander Naeser, Vladimir V. Romanov, Serguei A. Rykov

Author Affiliations +

Proceedings Volume 4064, Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2000) https://doi.org/10.1117/12.375415
Event: Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 1999, St. Petersburg, Russian Federation

Abstract

We present the first findings of high efficient Er³⁺- related electroluminescence ⁴I_13/2 yields ⁴I_13/2 from self-assembled silicon nanostructures with sizes varying from 1.0 to 10 nm that are naturally prepared as a subsequence of quantum-size n^--p junctions. The built-in electric field induced by these n⁺-p junctions is found to result in the Stark effect that perturbs strong sp-f mixing due to the electron-hole localization on the Er³⁺-ions incorporated into nanostructures. This spatial confinement is shown to cause ultrafast energy transfer to the erbium-related centers which increases with decreasing size of nanostructures thereby enhancing the electroluminescent efficiency.

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Nikolai T. Bagraev, Alexei D. Bouravleuv, Wolfgang Gehlhoff, Leonid E. Klyachkin, Anna M. Malyarenko, Margarita M. Mezdrogina, Alexander Naeser, Vladimir V. Romanov, and Serguei A. Rykov "Optical and magnetic properties for erbium-related centers in self-assembled silicon nanostructures", Proc. SPIE 4064, Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (25 January 2000); https://doi.org/10.1117/12.375415

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