Lithography process cost considerations for 120-nm groundrules

Bernhard Liegl; Christian Summerer

doi:10.1117/12.388932

5 July 2000 Lithography process cost considerations for 120-nm groundrules

Bernhard Liegl, Christian Summerer

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.388932
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

In the near future semiconductor manufacturing will continue to push minimum feature sizes towards and below dimensions of a tenth of a micron. The lithographic patterning process is particularly challenged to support this trend with an every-higher optical resolution. A variety of resolution enhancing technologies are currently developed to encounter this challenge. Processes with decreased wavelength, techniques using strong phase shifting and thin film imaging will compete in terms of optical performance and process cost-of-ownership over the next few years. This paper compares cost-of-ownership of major lithography options for memory wafer structuring at 120nm ground rules or below. ArF lithography, alternating phase shift masks and multi-layer resist techniques are the selected candidates for a process cost analysis. Their cost-of-ownership relevant characteristics are identified and quantified with focus on consistency. This is the basis for a cost analysis and will support a constructive discussion about process feasibility.

Citation Download Citation

Bernhard Liegl and Christian Summerer "Lithography process cost considerations for 120-nm groundrules", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.388932

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