Characterization of spatial CD variability, spatial mask-level correction, and improvement of circuit performance

Michael Orshansky; Linda Milor; Michael Brodsky; Ly Nguyen; Gene Hill; Yeng-Kaung Peng; Chenming Hu

doi:10.1117/12.389050

5 July 2000 Characterization of spatial CD variability, spatial mask-level correction, and improvement of circuit performance

Michael Orshansky, Linda Milor, Michael Brodsky, Ly Nguyen, Gene Hill, Yeng-Kaung Peng, Chenming Hu

Author Affiliations +

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.389050
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Statistical characterization of gate CD variability of a production CMOS process reveals a large spatial intra-field component, strongly dependent on the local layout patterns. We present a novel measurement based characterization approach that is capable of capturing all the relevant CD variation patterns necessary for accurate circuit modeling and statistical design. A rigorous analysis of the impact of intra-field variability on circuit performance is undertaken. We show that intra-field CD variation has a significant detrimental effect on the overall circuit performance by reducing the average speed by up to 20 percent. We derive a model quantitatively relating intra- field CD variance delay degradation. We propose a mask-level spatial gate CD correction algorithm to reduce the intra- field and overall variability, resulting in circuit performance improvement, and provide an analytical model to evaluate the effectiveness of correction for variance reduction.

Citation Download Citation

Michael Orshansky, Linda Milor, Michael Brodsky, Ly Nguyen, Gene Hill, Yeng-Kaung Peng, and Chenming Hu "Characterization of spatial CD variability, spatial mask-level correction, and improvement of circuit performance", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.389050

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