Behavior of fused silica materials for microlithography irradiated at 193 nm with low-fluence ArF radiation for tens of billions of pulses

Richard G. Morton; Richard L. Sandstrom; Gerry M. Blumenstock; Zsolt Bor; Chris K. Van Peski

doi:10.1117/12.389038

5 July 2000 Behavior of fused silica materials for microlithography irradiated at 193 nm with low-fluence ArF radiation for tens of billions of pulses

Richard G. Morton, Richard L. Sandstrom, Gerry M. Blumenstock, Zsolt Bor, Chris K. Van Peski

Author Affiliations +

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.389038
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Fused silica samples from seven different suppliers were exposed at low fluence; nominally 0.1 mJ/cm², for tens of billions of pulses. These materials are used in the manufacture of projection and other optics needed for DUV microlithography. The fluence level chosen for the exposures was intended to be close to that seen by some of the critical lenses in the projection assembly. Rather than the 'compaction' reported by many workers, most of the samples exhibited the opposite effect. The reduction of optical path by DUV radiation or 'rarefaction', as we have called it, is a physical phenomenon not known or published previous to our work. Dat and experimental conditions are presented which will hopefully lead to the ultimate full understanding of the rarefaction process.

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Richard G. Morton, Richard L. Sandstrom, Gerry M. Blumenstock, Zsolt Bor, and Chris K. Van Peski "Behavior of fused silica materials for microlithography irradiated at 193 nm with low-fluence ArF radiation for tens of billions of pulses", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.389038

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