0.3-um pitch random interconnect patterning with node connection phase-shifting mask: experiments and simulations

Hiroshi Fukuda; Shoji Hotta

doi:10.1117/12.389024

5 July 2000 0.3-μm pitch random interconnect patterning with node connection phase-shifting mask: experiments and simulations

Hiroshi Fukuda, Shoji Hotta

Author Affiliations +

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.389024
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

The effectiveness of node-connection phase-shifting mask (PSM) was investigated experimentally. In this method, the original design patterns are decomposed into several alternating PSM sub-patterns bas don geometrical rules, and multiple-exposure of these masks reconstructs the original design patterns. This is suitable for random logic interconnects, where wire features are on the 'DA-grid'. We applied this method to patterning a 0.3-micrometers pitch random interconnect with a conventional DUV exposure tool Random interconnect patterns with 0.3-micrometers pitch random interconnect with a conventional DUV exposure tool. Random interconnect patterns with 0.3-micrometers pitch were decomposed using in-house geometrical Boolean operators into three PSMs and were multiply exposed onto the same region of wafer using a KrF exposure tool. Though this is preliminary experiment without mask/process optimization, it shows a possibility of below 0.3-micrometers pitch logic interconnect with KrF tools. Thus, combining this with the phase-edge PSMs or some 'slimming' technologies for shrinking gate-length, the 0.1-micrometers generation logic LSIs are expected to be achieved with conventional DUV exposure tools.

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Hiroshi Fukuda and Shoji Hotta "0.3-μm pitch random interconnect patterning with node connection phase-shifting mask: experiments and simulations", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.389024

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