Paper
23 June 2000 Techniques to print sub-0.2-μm contact holes
Kayo Aramaki, T. Hamada, DongKwan Lee, Hiroshi Okazaki, Naoko Tsugama, Georg Pawlowski
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Abstract
The present paper examines the applicability of three basic resist types (acetal, hybrid, t-butylester) to print sub-0.2 micrometer contact holes (C/H) using state-of-the-art illumination and processing techniques. In terms of ultimate resolution and DOF the acetal-based material showed the best performance under standard processing conditions, but exhibited serious limitations upon application of a half-tone phase-shift mask (HT-PSM) due to side-lobe formation. The hybrid material showed significantly better HT-PSM compatibility and -- due to an enhanced adaptability to practical thermal flow processes -- the best results upon application of a postbake to trigger thermally induced shrinkage. The t-butylester material usually performed second to the best under any selected illumination condition, and may be considered as top performer from a general point of view as no real show-stopper was observed. Thermal flow results of the hybrid material are discussed in more detail and briefly compared with alternate shrinking technologies, such as RELACSTM or CARLTM.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kayo Aramaki, T. Hamada, DongKwan Lee, Hiroshi Okazaki, Naoko Tsugama, and Georg Pawlowski "Techniques to print sub-0.2-μm contact holes", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388360
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Cited by 7 scholarly publications and 1 patent.
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KEYWORDS
Photomasks

Photoresist processing

Binary data

Silicon

Standards development

Fourier transforms

Photoresist materials

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