Solvent content of thick photoresist films

Octavia P. Lehar; John P. Sagan; Lizhong Zhang; Ralph R. Dammel

doi:10.1117/12.388328

23 June 2000 Solvent content of thick photoresist films

Octavia P. Lehar, John P. Sagan, Lizhong Zhang, Ralph R. Dammel

Proceedings Volume 3999, Advances in Resist Technology and Processing XVII; (2000) https://doi.org/10.1117/12.388328
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Thick photoresist films continue to play an important role in many areas such as micromachining, magnetic recording heads, or wafer bumping. The composition of the solid film is critical in achieving the high performance of the thick resist needed at the very high aspect ratios (> 10) which are being phased in by today's production lines. Dissolution as well as optical properties of thick resist films are affected by resist drying and by the PAC decomposition process at higher temperatures. In our study we determine the residual solvent in the film as a function of film thickness and soft bake conditions for AZ^RP4620 resist, AZ^R9260 resist, and the new ultrahigh viscosity AZ^REXP PLP^TM100XT resist at film thickness between 10 and 40 micrometer. Lithographic performance is compared for different levels of residual solvent and PAC decomposition. A direct determination of the solvent content by gas chromatography is correlated with results obtained by FT-IR measurements. It is found that determination of solvent content by FT-IR measurements is possible but that the FT-IR signal is convoluted with that of a PAC decomposition product. PAC decomposition itself is also monitored by the C equals N₂ FT-IR absorbance, and PAC decomposition kinetics are analyzed to give the kinetic parameters.

Citation Download Citation

Octavia P. Lehar, John P. Sagan, Lizhong Zhang, and Ralph R. Dammel "Solvent content of thick photoresist films", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388328

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