Progress toward developing high-performance 193-nm single-layer positive resist based on functionalized poly(norbornenes)

Pushkara Rao Varanasi; George M. Jordhamo; Margaret C. Lawson; K. Rex Chen; William R. Brunsvold; Timothy Hughes; Robin Keller; Mahmoud Khojasteh; W. Li; Robert D. Allen; Hiroshi Ito; Juliann Opitz; Hoa D. Truong; Thomas I. Wallow

doi:10.1117/12.388280

23 June 2000 Progress toward developing high-performance 193-nm single-layer positive resist based on functionalized poly(norbornenes)

Pushkara Rao Varanasi, George M. Jordhamo, Margaret C. Lawson, K. Rex Chen, William R. Brunsvold, Timothy Hughes, Robin Keller, Mahmoud Khojasteh, W. Li, Robert D. Allen, Hiroshi Ito, Juliann Opitz, Hoa D. Truong, Thomas I. Wallow

Author Affiliations +

Proceedings Volume 3999, Advances in Resist Technology and Processing XVII; (2000) https://doi.org/10.1117/12.388280
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

In this paper, we have shown the progress we have made in improving reactive-ion-etch stability and lithographic performance of IBM 193 nm resist materials. Using selectively functionalized cyclicolefins, we have developed 193 nm resists with etch stability and post-etch surface roughness comparable to those of the matured, state-of-the-art DUV resists. Furthermore, we have also demonstrated dramatically improvement in dense line (100 nm 1:1 L/S) and semi-dense line (< 100 nm 1:2, 1:3 L/S) resolution using resolution enhancement techniques such as alternate phase shift mask.

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Pushkara Rao Varanasi, George M. Jordhamo, Margaret C. Lawson, K. Rex Chen, William R. Brunsvold, Timothy Hughes, Robin Keller, Mahmoud Khojasteh, W. Li, Robert D. Allen, Hiroshi Ito, Juliann Opitz, Hoa D. Truong, and Thomas I. Wallow "Progress toward developing high-performance 193-nm single-layer positive resist based on functionalized poly(norbornenes)", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388280

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