Development of analysis system for F2-excimer laser photochemical processes

Atsushi Sekiguchi; Mikio Kadoi; Yasuhiro Miyake; Toshiharu Matsuzawa; Chris A. Mack

doi:10.1117/12.388324

23 June 2000 Development of analysis system for F₂-excimer laser photochemical processes

Atsushi Sekiguchi, Mikio Kadoi, Yasuhiro Miyake, Toshiharu Matsuzawa, Chris A. Mack

Proceedings Volume 3999, Advances in Resist Technology and Processing XVII; (2000) https://doi.org/10.1117/12.388324
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

A system for photochemical analysis of F₂-excimer laser lithography processes has been developed. The system, VUVES- 4500, consists of 3 units: (1) an exposure and bake unit that uses the F₂-excimer laser to carry out a flood exposure and then post-exposure bake (PEB) of a resist coated wafer, (2) a unit for the measurement of development rate of photoresists, and (3) a simulation unit that utilizes PROLITH to calculate the resist profiles and process latitude using the measured development rate data. With this system, preliminary evaluation of the performance of F₂ excimer laser lithography can be performed without a lithography tool that is capable of imaging and alignment. Profiles for 100 nm lines are simulated for the PAR-101 resist (manufactured by Sumitomo Chemical) and the SAL-601 resist (manufactured by Shipley), a chemically amplified resist that has sensitivity at the F₂ excimer laser wavelength. The simulation successfully predicts the resist behavior. Thus, it is confirmed that the system enables efficient evaluation of the performance of F₂ excimer laser lithography processes.

Citation Download Citation

Atsushi Sekiguchi, Mikio Kadoi, Yasuhiro Miyake, Toshiharu Matsuzawa, and Chris A. Mack "Development of analysis system for F₂-excimer laser photochemical processes", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388324

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