Design strategies for 157-nm single-layer photoresists: lithographic evaluation of a poly(A-trifluoromethyl vinyl alcohol) copolymer

Dirk Schmaljohann; Young C. Bae; Gina L. Weibel; Alyssandrea H. Hamad; Christopher Kemper Ober

doi:10.1117/12.388297

23 June 2000 Design strategies for 157-nm single-layer photoresists: lithographic evaluation of a poly(α -trifluoromethyl vinyl alcohol) copolymer

Dirk Schmaljohann, Young C. Bae, Gina L. Weibel, Alyssandrea H. Hamad, Christopher Kemper Ober

Author Affiliations +

Proceedings Volume 3999, Advances in Resist Technology and Processing XVII; (2000) https://doi.org/10.1117/12.388297
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Poly(vinyl alcohol-co-(alpha) -trifluoromethyl vinyl alcohol) (PVA-co-CF₃PVA) protected with an acid cleavable group was prepared as a single-layer photoresist for use in 157 nm VUV lithography. It was found that the (alpha) -trifluoromethyl substituent renders PVA-co-CF₃PVA readily soluble in 0.262 N TMAH. The protected polymer can be spin-coated from PGMEA and preliminary studies using 248 nm exposure showed a THP protected PVA-co-CF₃PVA undergoes chemically amplified deprotection with a clearing dose of approximately 15 mJ/cm². Using a VUV spectrometer, absorption coefficients of approximately 3 micrometer^-1 were observed at 157 nm with PVA-co-CF₃PVA and THP protected PVA-co-CF₃PVA. Detailed lithographic evaluation of the polymer is underway and design strategies for 157 nm single-layer photoresists will be discussed.

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Dirk Schmaljohann, Young C. Bae, Gina L. Weibel, Alyssandrea H. Hamad, and Christopher Kemper Ober "Design strategies for 157-nm single-layer photoresists: lithographic evaluation of a poly(α -trifluoromethyl vinyl alcohol) copolymer", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388297

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