New purged UV spectroscopic ellipsometer to characterize thin films and multilayers at 157 nm

Pierre Boher; Jean-Philippe Piel; Patrick Evrard; Christophe Defranoux; Marta Espinosa; Jean-Louis P. Stehle

doi:10.1117/12.386494

2 June 2000 New purged UV spectroscopic ellipsometer to characterize thin films and multilayers at 157 nm

Pierre Boher, Jean-Philippe Piel, Patrick Evrard, Christophe Defranoux, Marta Espinosa, Jean-Louis P. Stehle

Proceedings Volume 3998, Metrology, Inspection, and Process Control for Microlithography XIV; (2000) https://doi.org/10.1117/12.386494
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Spectroscopic ellipsometry is one of the more important tools for thin film metrology. It is now intensively used in microelectronics and especially for the microlithographic applications. Instrumentation for the next generation of UV lithography at 157 nm requires special optical setup since oxygen and water are extremely absorbing below 190 nm. The ellipsometer discussed in this paper works into a purged glove box to reduce the oxygen and water contamination in the part per million range. The optical setup has been especially studied for microlithographic applications with a premonochromator in the polarizer arm to avoid resist photobleaching. Technical details of the system and measurements results on substrates and thin films are reported hereafter. Results are compared to those obtained with more standard ellipsometers and correlated to other results obtained with grazing x-ray reflectance technique.

Citation Download Citation

Pierre Boher, Jean-Philippe Piel, Patrick Evrard, Christophe Defranoux, Marta Espinosa, and Jean-Louis P. Stehle "New purged UV spectroscopic ellipsometer to characterize thin films and multilayers at 157 nm", Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); https://doi.org/10.1117/12.386494

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