Paper
21 July 2000 Relationship between an EUV source and the performance of an EUV lithographic system
Vadim Banine, Jos P.H. Benschop, Martyn Leenders, Roel Moors
Author Affiliations +
Abstract
The light source is a critical factor when Extreme Ultra Violet Lithography (EUVL) is used. This paper shows the link between the light source and the customer's requirements. These are: Throughput, Cost of Ownership (CoO) and imaging quality (e.g. CD uniformity). Also shown is how customer requirements dictate the necessary performance specifications for light sources. To be competitive with other New Generation Lithography technologies, EUVL tools should show a potential for high throughput. This puts a high requirement on the collectable in-band power produced by an EUV source. CD control requirements, together with restrictions of reflective optics, are discussed. This means that the pulse-to-pulse repeatability, the spatial stability control and the repetition rates, must be substantially better than those of current optical systems. It is essential, in the early stages of the development of potential light sources, to understand the source limitations. It is also essential to see the way the light source or the total source/lithographic system could be improved, in the development time, to meet the lithography tool requirements. Although there are no light sources currently under development that comply with the requirements for an EUVL production tool, future improvement in the performance of light sources seems possible. This paper shows detailed analyses of the way to meet (beta) and production tool requirements, including the increase in repetition rate, for all of the sources. The decrease in energy per pulse will also be discussed. The performance requirements for the light source for the first lithographic tool, together with the timeline for its choice, will be shown.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vadim Banine, Jos P.H. Benschop, Martyn Leenders, and Roel Moors "Relationship between an EUV source and the performance of an EUV lithographic system", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); https://doi.org/10.1117/12.390048
Lens.org Logo
CITATIONS
Cited by 32 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Light sources

Lithography

Extreme ultraviolet

Extreme ultraviolet lithography

Reflectivity

Mirrors

Plasma

RELATED CONTENT

High power LPP EUV source system development status
Proceedings of SPIE (December 10 2009)
EUVL system: moving towards production
Proceedings of SPIE (March 17 2009)
Light sources for EUV lithography at the 22 nm node...
Proceedings of SPIE (March 23 2012)
Extreme-ultraviolet sources for lithography applications
Proceedings of SPIE (August 20 2001)
EUCLIDES: first phase completed!
Proceedings of SPIE (July 21 2000)

Back to Top