Coupling Properties Of Semiconductor Lasers To Collimating Optics

Elmar E. Wagner; Jorg Angerstein; Klaus Petermann

doi:10.1117/12.935269

26 October 1983 Coupling Properties Of Semiconductor Lasers To Collimating Optics

Elmar E. Wagner, Jorg Angerstein, Klaus Petermann

Proceedings Volume 0396, Advances in Laser Scanning and Recording; (1983) https://doi.org/10.1117/12.935269
Event: 1983 International Technical Conference/Europe, 1983, Geneva, Switzerland

Abstract

Semiconductor lasers are used to an increasing extent in electro-optical systems. The highly divergent emission of the laser is usually collimated into a parallel beam. The properties of the collimated beam are directly related to the properties of emission. The physical origin of far-field distribution, wave aberration, astigmatism and polarization are discussed and related to the properties of the collimated beam. Refractive-index guided and gain-guided lasers are compared with regard to maximum output power, coupling efficiency, wave aberrations, and feedback-induced noise.

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Elmar E. Wagner, Jorg Angerstein, and Klaus Petermann "Coupling Properties Of Semiconductor Lasers To Collimating Optics", Proc. SPIE 0396, Advances in Laser Scanning and Recording, (26 October 1983); https://doi.org/10.1117/12.935269

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