Separative structure ISFETs on a glass substrate

Li Te Yin; Jung Chuan Chou; Wen Yaw Chung; Tai Ping Sun; Shen Kan Hsiung

doi:10.1117/12.369351

11 November 1999 Separative structure ISFETs on a glass substrate

Li Te Yin, Jung Chuan Chou, Wen Yaw Chung, Tai Ping Sun, Shen Kan Hsiung

Proceedings Volume 3897, Advanced Photonic Sensors and Applications; (1999) https://doi.org/10.1117/12.369351
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore

Abstract

In our research, the glass was used as a substrate for H⁺ ion sensitive field effect transistor (ISFET). The sensitive characteristics of five structures for separative extend gate ion sensitive field effect transistors were studied, which include tin oxide/aluminum/micro slide glass, tin oxide/aluminum/corning glass, indium tin oxide (ITO) glass, tin oxide/indium, indium tin oxide glass and tin oxide/micro slide glass. Indium tin oxide thin film is the first time used as a H⁺ ion sensitive film which has a linear pH sensitivity of Nerstern response, about 58 mV/pH, between pH2 and pH12. In addition, the sensing area effect of the tin oxide/glass, tin oxide/ITO glass and ITO glass structure which without Al conductive layer will be discussed.

Citation Download Citation

Li Te Yin, Jung Chuan Chou, Wen Yaw Chung, Tai Ping Sun, and Shen Kan Hsiung "Separative structure ISFETs on a glass substrate", Proc. SPIE 3897, Advanced Photonic Sensors and Applications, (11 November 1999); https://doi.org/10.1117/12.369351

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