Oxygen gas sensing and microstructure characterization of sol-gel-prepared MoO3-TiO2 thin films

Yongxiang Li; Muralihar K. Ghantasala; Kosmas Galatsis; Wojtek Wlodarski

doi:10.1117/12.364505

1 October 1999 Oxygen gas sensing and microstructure characterization of sol-gel-prepared MoO3-TiO2 thin films

Yongxiang Li, Muralihar K. Ghantasala, Kosmas Galatsis, Wojtek Wlodarski

Proceedings Volume 3892, Device and Process Technologies for MEMS and Microelectronics; (1999) https://doi.org/10.1117/12.364505
Event: Asia Pacific Symposium on Microelectronics and MEMS, 1999, Gold Coast, Australia

Abstract

Binary metal oxide MoO₃-TiO₂ thin films have been prepared by the sol-gel process. These films were deposited on sapphire substrates with interdigital electrodes and single crystal silicon substrates. The films were annealed at different temperatures of 400 degrees C, 500 degrees C, and 600 degrees C for 1 hour. The morphology, crystalline structure and chemical composition of the films have been analyzed using SEM, XRD, RBS and XPS techniques. The SEM analysis showed that the films annealed at 500 degrees C are smooth and uniform with nanosized grains and probes. RBS and XPS characterizations have revealed that the films are nearly stoichiometric. In this work, we have investigated the sensitivity of this material for oxygen and ozone gases. The MoO₃-based gas sensor is capable of detecting O₂ down to 50 ppm with a very fast response time. Adding TiO₂ to MoO₃ thin films tremendously reduced the resistance, which assisted the measurement of ozone gas sensing.

Citation Download Citation

Yongxiang Li, Muralihar K. Ghantasala, Kosmas Galatsis, and Wojtek Wlodarski "Oxygen gas sensing and microstructure characterization of sol-gel-prepared MoO3-TiO2 thin films", Proc. SPIE 3892, Device and Process Technologies for MEMS and Microelectronics, (1 October 1999); https://doi.org/10.1117/12.364505

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