Paper
4 November 1999 Characterization of diffusion length of minority carriers in (CdZn)Te at temperatures of 80 to 300 K
Jan Franc, Eduard Belas, Pavel Hlidek, A. L. Toth, Helmut Sitter, Roman Grill, Pavel Hoeschl, Pavel Moravec
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Abstract
Diffusion length (L) of minority carriers was determined in not intentionally doped Cd0.93Zn0.07Te single crystals by the EBIC method at temperatures 80-300K using an evaporated Au Schottky barrier for a separation of electron- hole pairs. The L values in P-(CdZn)Te were longer, than those of the binary CdTe and some showed a steep increase with decreasing temperature. The correlation of the diffusion length measurements with photoluminescence for the (CdZn)Te was observed. Temperature dependence of L for holes in N-(CdZn)Te fabricated by In diffusion were measured as well.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan Franc, Eduard Belas, Pavel Hlidek, A. L. Toth, Helmut Sitter, Roman Grill, Pavel Hoeschl, and Pavel Moravec "Characterization of diffusion length of minority carriers in (CdZn)Te at temperatures of 80 to 300 K", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368349
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KEYWORDS
Diffusion

Luminescence

Crystals

Excitons

Gold

Phonons

Zinc

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