Numerical simulation of the surface melt dynamics in excimer laser crystallization of a-Si films on glass for TFT applications

Eric Fogarassy; Salome de Unamuno

doi:10.1117/12.377024

7 February 2000 Numerical simulation of the surface melt dynamics in excimer laser crystallization of a-Si films on glass for TFT applications

Eric Fogarassy, Salome de Unamuno

Author Affiliations +

Proceedings Volume 3888, High-Power Lasers in Manufacturing; (2000) https://doi.org/10.1117/12.377024
Event: Advanced High-Power Lasers and Applications, 1999, Osaka, Japan

Abstract

The use of high-power pulsed excimer lasers, working in the nanosecond (ranging from 20 to 200 ns) duration regime, allows the deposition of a large amount of energy in very short times into the near surface region of amorphous silicon films deposited on glass. Under suitable conditions, the laser irradiation leads to the rapid melting of the a-si layer and its regrowth into polysilicon. In order to optimize the final quality of the poly-Si film and the formation of a large grained material through a so-called super-lateral-growth phenomenon, it appears necessary to control extremely carefully the surface melt dynamics of the laser processing, by developing a numerical simulation based on the resolution of the one-dimensional heat flow equation. It is demonstrated that the melting threshold, melt duration, depth of fusion and solidification velocity, are strongly dependent on the laser pulse duration, substrate temperature, thickness of the silicon and oxide (or nitride) barrier layers. These numerical analyses are also shown to be consistent with the experimental results.

Citation Download Citation

Eric Fogarassy and Salome de Unamuno "Numerical simulation of the surface melt dynamics in excimer laser crystallization of a-Si films on glass for TFT applications", Proc. SPIE 3888, High-Power Lasers in Manufacturing, (7 February 2000); https://doi.org/10.1117/12.377024

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