Critical structure characterization in 0.25-um metal masking

Chung Yih Lee; Wei Wen Ma; Sajan R. Marokkey; Alex Tsun-Lung Cheng

doi:10.1117/12.361319

3 September 1999 Critical structure characterization in 0.25-μm metal masking

Chung Yih Lee, Wei Wen Ma, Sajan R. Marokkey, Alex Tsun-Lung Cheng

Proceedings Volume 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V; (1999) https://doi.org/10.1117/12.361319
Event: Microelectronic Manufacturing '99, 1999, Santa Clara, CA, United States

Abstract

The lithography process for 0.25 micrometer metal masking faces the challenge of tight design rule. Island patterning and line-end shortening have become more important due to the zero or small contact/via enclosure. A full understanding of the process latitude is necessary to choose the right process for a certain metal layer of 0.25 micrometer technology. In this paper, we develop a methodology to evaluate and optimize a metal asking process based on a set of critical structures. By characterized the overlapping process window for these critical structures, a comprehensive process latitude can be defined. This methodology is applied to the optimization of stepper NA/PC setting and the selection between I-line and DUV processes.

Citation Download Citation

Chung Yih Lee, Wei Wen Ma, Sajan R. Marokkey, and Alex Tsun-Lung Cheng "Critical structure characterization in 0.25-μm metal masking", Proc. SPIE 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V, (3 September 1999); https://doi.org/10.1117/12.361319

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