Integrated simulation of the plasma-assisted gate oxide nitridation

Valeriy Sukharev; Sheldon Aronowitz; Vladimir Zubkov; Helmut Puchner; John Haywood; James P. Kimball

doi:10.1117/12.360558

1 September 1999 Integrated simulation of the plasma-assisted gate oxide nitridation

Valeriy Sukharev, Sheldon Aronowitz, Vladimir Zubkov, Helmut Puchner, John Haywood, James P. Kimball

Proceedings Volume 3881, Microelectronic Device Technology III; (1999) https://doi.org/10.1117/12.360558
Event: Microelectronic Manufacturing '99, 1999, Santa Clara, CA, United States

Abstract

Quantum chemical calculations were employed to get insight into the mechanisms involved in plasma-induced nitridation of gate oxide that will suppress boron penetration. The roles played by the nitrogen cations and atoms were explored. It was shown that B interaction with siloxane rings that contain incorporated nitrogen yielded a larger energy gain than rings without nitrogen. This explains the chemical nature of the nitrogen-induced barrier effect. Monte Carlo simulations were used to simulate the necessary energy of incident N₂ cations to produce the bond cleavage down to a particular depth in the amorphous SiO₂ layer. A combination of the HPEM and PCMC codes were used to simulate nitrogen atomic and cation fluxes and their energy distributions at the wafer surface. Combining simulated cation fluxes and their energy distributions at the wafer surface. Combining simulated cation energies with PROMIS Monte Carlo simulation results make it possible to derive the plasma process parameters that will permit a desired level of nitridation to be reached.

Citation Download Citation

Valeriy Sukharev, Sheldon Aronowitz, Vladimir Zubkov, Helmut Puchner, John Haywood, and James P. Kimball "Integrated simulation of the plasma-assisted gate oxide nitridation", Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); https://doi.org/10.1117/12.360558

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