Improvement of ultrathin gate oxide by a novel rapid thermal oxidation process with in-situ steam generation

Mo-Chium Yu; Syun-Ming Jang; C. H. Diaz; C. H. Yu; S. C. Sun; M. S. Liang

doi:10.1117/12.360557

1 September 1999 Improvement of ultrathin gate oxide by a novel rapid thermal oxidation process with in-situ steam generation

Mo-Chium Yu, Syun-Ming Jang, C. H. Diaz, C. H. Yu, S. C. Sun, M. S. Liang

Author Affiliations +

Proceedings Volume 3881, Microelectronic Device Technology III; (1999) https://doi.org/10.1117/12.360557
Event: Microelectronic Manufacturing '99, 1999, Santa Clara, CA, United States

Abstract

This paper reports for the first time the growth of ultra- thin gate oxide by rapid thermal oxidation using in-situ generated steam (Wet RTO). Compared to conventional gate oxide grown by wet furnace and dry RTO, excellent oxide integrity of Wet RTO is demonstrated. Furthermore, the Wet RTO oxides nitrided by in-situ NO rapid thermal anneal also exhibits improved device transconductance, current drivability, and hot carrier reliability.

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Mo-Chium Yu, Syun-Ming Jang, C. H. Diaz, C. H. Yu, S. C. Sun, and M. S. Liang "Improvement of ultrathin gate oxide by a novel rapid thermal oxidation process with in-situ steam generation", Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); https://doi.org/10.1117/12.360557

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