Placement measurement and FE modeling results for distortion control of stencil masks

Albrecht Ehrmann; Thomas Struck; Rainer Kaesmaier; Ernst Haugeneder; Hans Loeschner; Joerg Butschke; Florian Letzkus; Mathias Irmscher; Reinhard Springer; Roxann L. Engelstad

doi:10.1117/12.373376

30 December 1999 Placement measurement and FE modeling results for distortion control of stencil masks

Albrecht Ehrmann, Thomas Struck, Rainer Kaesmaier, Ernst Haugeneder, Hans Loeschner, Joerg Butschke, Florian Letzkus, Mathias Irmscher, Reinhard Springer, Roxann L. Engelstad

Author Affiliations +

Proceedings Volume 3873, 19th Annual Symposium on Photomask Technology; (1999) https://doi.org/10.1117/12.373376
Event: Photomask Technology and Management, 1999, Monterey, CA, United States

Abstract

Distortion control is one of the key issues to solve for IPL stencil mask development. Placement is measured by a LEICA LMS IPRO system. Registration as well as overlay results and the error contributions of the measurement will be presented. The production flow of IPL stencil masks is marked by the fact, that e-beam patterning is done on the bulk wafer, whereas the removal of the bulk silicon and the creation of the free membrane takes place at the end of the process, after silicon trench etching. Therefore, distortions appear at the release of the membrane after bulk silicon etching and oxide removal. At e-beam patterning, the mask wafer blank is pre-stressed by the sum of the stresses of the different layers as bulk silicon, silicon oxide, the silicon of the latter membrane and resist. Additionally, the initial warp and bow of the mask wafer blank have to be considered. The analysis of the finite element modeling compares the placement at e-beam writing to the situation after membrane completion. With this information, the efficiency of a FE-supported software correction before mask patterning can be improved. Measurements of masks with different stress values are to be discussed in order to deduce the optimum stress values for IPL stencil masks.

Citation Download Citation

Albrecht Ehrmann, Thomas Struck, Rainer Kaesmaier, Ernst Haugeneder, Hans Loeschner, Joerg Butschke, Florian Letzkus, Mathias Irmscher, Reinhard Springer, and Roxann L. Engelstad "Placement measurement and FE modeling results for distortion control of stencil masks", Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); https://doi.org/10.1117/12.373376

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
9 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Photomasks

Semiconducting wafers

Distortion

Silicon

Etching

Electron beam lithography

Oxides

Show All Keywords

Keywords/Phrases

Search In:

Publication Years