Advanced e-beam lithography system JBX-9000MV for 180-nm masks

Hitoshi Takemura; Tadashi Komagata; Yasutoshi Nakagawa; Kazumitsu Tanaka

doi:10.1117/12.373325

30 December 1999 Advanced e-beam lithography system JBX-9000MV for 180-nm masks

Hitoshi Takemura, Tadashi Komagata, Yasutoshi Nakagawa, Kazumitsu Tanaka

Proceedings Volume 3873, 19th Annual Symposium on Photomask Technology; (1999) https://doi.org/10.1117/12.373325
Event: Photomask Technology and Management, 1999, Monterey, CA, United States

Abstract

JEOL has developed an E-Beam lithography system JBX-9000MV with a vector scan and variable shaped beam (VSB) electron optics for the manufacture of 180nm - 150nm devices masks. This system employs 50kV accelerating voltage, low space charge effect column and in-lens deflector system. Beam current density is 10A/cm², maximum mask size is 230 mm (9'), beam address size is 2 nm. Extended evaluation of the system shows pattern placement accuracy of 30 nm or better, field stitching accuracy of 20 nm or better, critical dimension (CD) accuracy of 20 nm or better.

Citation Download Citation

Hitoshi Takemura, Tadashi Komagata, Yasutoshi Nakagawa, and Kazumitsu Tanaka "Advanced e-beam lithography system JBX-9000MV for 180-nm masks", Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); https://doi.org/10.1117/12.373325

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