Paper
13 December 1999 NPN-PNP InP HBT technology and applications to low-power wireless systems
Dimitris Pavlidis, Donald Sawdai, Delong Cui
Author Affiliations +
Proceedings Volume 3861, Gigahertz Devices and Systems; (1999) https://doi.org/10.1117/12.373015
Event: Photonics East '99, 1999, Boston, MA, United States
Abstract
The properties of NPN and PNP InP HBTs are reviewed and complementary HBT amplifiers built with this technology are explored. Complementary amplifiers such as those presented here manifest reduced harmonic distortion and could lead to improved wireless communication systems. The high efficiency push-pull amplifiers increase battery life, which is critical for hand-held systems. InP-based HBT technology offers distinct advantages over other semiconductor device and circuit approaches for wireless systems and the key merits of this technology are reported.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dimitris Pavlidis, Donald Sawdai, and Delong Cui "NPN-PNP InP HBT technology and applications to low-power wireless systems", Proc. SPIE 3861, Gigahertz Devices and Systems, (13 December 1999); https://doi.org/10.1117/12.373015
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KEYWORDS
Amplifiers

Distortion

Telecommunications

Field effect transistors

Microwave radiation

Indium gallium arsenide

Wireless communications

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