Microwave noise characteristics of GaAs-based HBTs

Hidenori Shimawaki; Masafumi Kawanaka; Norio Goto

doi:10.1117/12.373007

13 December 1999 Microwave noise characteristics of GaAs-based HBTs

Hidenori Shimawaki, Masafumi Kawanaka, Norio Goto

Proceedings Volume 3861, Gigahertz Devices and Systems; (1999) https://doi.org/10.1117/12.373007
Event: Photonics East '99, 1999, Boston, MA, United States

Abstract

Based on the design guidelines for low-noise HBTs which is derived from Hawkins' model, an AlGaAs/GaAs HBT with emitter-ledge passivation is fabricated for low frequency applications. This HBT increases the current gain, especially at low collector current densities--a key device parameter that impacts the noise figure at low frequencies. An NF_min of 0.6 dB with an G_a of 17.7 dB is obtained for an HBT with 2.5- X 20-micrometers X 2 emitters at 2 GHz. An AlGaAs/InGaAs HBT with regrown base contacts is also fabricated to reduce the base transit time and the base resistance, without increasing the emitter junction capacitance, for higher frequency low-noise applications. This HBT achieves an NF_min of 1.2 dB with a G_a of 10.3 dB and an NF_min of 1.7 dB with a G_a of 8.7 dB at 12 and 8 GHz, respectively, and can be useful at low frequencies as well, due to a low equivalent noise resistance that make noise matching easier.

Citation Download Citation

Hidenori Shimawaki, Masafumi Kawanaka, and Norio Goto "Microwave noise characteristics of GaAs-based HBTs", Proc. SPIE 3861, Gigahertz Devices and Systems, (13 December 1999); https://doi.org/10.1117/12.373007

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