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For frequency domain storage rare earth doped sulfide show the most promising characteristics of any spectral holeburning material known. They provide the desired density of storage with a remarkable stability of memory against storage, read- out, and thermal surges. Problems associated with the fabrication of a prototype device not only require a careful consideration of design parameters but also raise some interesting questions regarding the material characteristics and the holeburning mechanism. This paper gives the status of our efforts in the direction of making thin films of MgS and CaS doped with Eu suitable for spectral holeburning based optical storage using the Pulsed Laser Vapor Deposition (PLD) technique.
J. L. Park,Levent Biyikli,Mohamed F. Aly, andZameer U. Hasan
"Pulsed laser deposited thin films of sulfides for high-density memory storage", Proc. SPIE 3802, Advanced Optical Data Storage: Materials, Systems, and Interfaces to Computers, (22 November 1999); https://doi.org/10.1117/12.370235
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J. L. Park, Levent Biyikli, Mohamed F. Aly, Zameer U. Hasan, "Pulsed laser deposited thin films of sulfides for high-density memory storage," Proc. SPIE 3802, Advanced Optical Data Storage: Materials, Systems, and Interfaces to Computers, (22 November 1999); https://doi.org/10.1117/12.370235