Paper
26 October 1999 High-speed backside-illuminated time-delay-integration (TDI) CCDs
John R. Tower, Thomas M. Sudol, Vipulkumar Patel, Pradyumna K. Swain, Peter A. Levine, Fu-Lung Hsueh, Robin M. Dawson, Grazyna M. Meray, James T. Andrews, S. Goldfarb
Author Affiliations +
Abstract
A backside illuminated time delay integration (TDI) charge coupled device (CCD) technology has been developed. Imagers have been demonstrated at 13 pm pixel size and 8 pm pixel size. Photocomposition (stitching) has been employed to realize TDI iinagers of length < 60 mm. Performance has been enhanced in the areas of quantum efficiency, dynamic range, modulation transfer function (MTF), and line scan rates. The focus of this work has been to develop this new generation of line scan imagers for advanced reconnaissance applications. The enhancements permit the deployment of new camera systems with higher sensitivity, and higher resolution. To support the deployment of this technology into rugged environments, a custom packaging technology has been 'developed. The packages provide a hermetic enclosure for the CCD and establish precise alignment of the CCD pixels to the package mounting fixture. This paper will summarize the design features of the 13 pm pixel and 8 jim pixel TDI arrays. Measured performance will be presented. Future plans for this backside illuminated TDI technology will be discussed.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John R. Tower, Thomas M. Sudol, Vipulkumar Patel, Pradyumna K. Swain, Peter A. Levine, Fu-Lung Hsueh, Robin M. Dawson, Grazyna M. Meray, James T. Andrews, and S. Goldfarb "High-speed backside-illuminated time-delay-integration (TDI) CCDs", Proc. SPIE 3794, Materials and Electronics for High-Speed and Infrared Detectors, (26 October 1999); https://doi.org/10.1117/12.366741
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Cited by 1 scholarly publication.
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KEYWORDS
Charge-coupled devices

Clocks

Modulation transfer functions

Quantum efficiency

Imaging systems

Silicon

Metals

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