Interactive OPC simulator for memory devices

Hirotomo Inui; Haruo Iwasaki; Toshiyuki Ohta; Hiroyoshi Tanabe

doi:10.1117/12.360195

25 August 1999 Interactive OPC simulator for memory devices

Hirotomo Inui, Haruo Iwasaki, Toshiyuki Ohta, Hiroyoshi Tanabe

Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999) https://doi.org/10.1117/12.360195
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan

Abstract

The practical OPC simulation system suitable for memory devices is developed with a simple threshold model considering acid diffusion in chemically amplified resists. And the resist parameter extraction method is also presented. The simulation performance is within 0.01 micrometer CD error, and within a few second computation time for 4 micrometer² area memory cell on a EWS.

Citation Download Citation

Hirotomo Inui, Haruo Iwasaki, Toshiyuki Ohta, and Hiroyoshi Tanabe "Interactive OPC simulator for memory devices", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); https://doi.org/10.1117/12.360195

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