Paper
25 August 1999 Evaluation of the impact of pattern fidelity on photomask inspectability
Kevin S. Woolverton, Gang Liu, Peter Zwigl, Wayne E. Ruch
Author Affiliations +
Abstract
In recent years a manufacturable inspection recipe has been limited by the number of nuisance defects instead of the true sensitivity capability of the inspection tool for the top of the line products. In general, the nuisance defects are a result from either sub-resolution mask design or non- uniformity issue of mask pattern fidelity. Pattern fidelity here refers to corner rounding, line edge roughness and localized CD variation. Pattern fidelity plays an important role in inspectability. This study quantitatively evaluates the impact of pattern fidelity on mask inspectability. The first phase of this study, which is covered in this paper, will establish a correlation between KLA measured run-time- bias (RTB) and SEM/optical measured line width and corner rounding. The second phase of this study will focus on the impact of pattern fidelity resulting from different mask processes on inspectability in terms of nuisance defects. This paper will cover the initial results of the second phase study, including the comparison among different resist and different etch processes. The purpose of the study is to eventually establish pattern fidelity requirements for a given defect specification to ensure a manufacturable inspection process. As a result, one can use nuisance defect count as a mask process monitor.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kevin S. Woolverton, Gang Liu, Peter Zwigl, and Wayne E. Ruch "Evaluation of the impact of pattern fidelity on photomask inspectability", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); https://doi.org/10.1117/12.360247
Lens.org Logo
CITATIONS
Cited by 1 patent.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Inspection

Photomasks

Critical dimension metrology

Etching

Reticles

Manufacturing

Defect detection

RELATED CONTENT

Process control technology for nanoimprint lithography
Proceedings of SPIE (March 23 2018)
Actual use of phase-shift mask
Proceedings of SPIE (December 08 1995)
Use of a MEBES tool to manufacture 180-nm reticles
Proceedings of SPIE (April 28 1999)
Initial results for a PBS replacement resist
Proceedings of SPIE (December 07 1994)

Back to Top