Effects of PECVD W-N diffusion barrier on thermal stress and electrical properties of Cu/W-N/SiOF multilevel interconnect

YongTae Kim; Dong Joon Kim; Seoghyeong Lee; Young K. Park; Ik-Soo Kim; Jong-Wan Park

doi:10.1117/12.346918

27 April 1999 Effects of PECVD W-N diffusion barrier on thermal stress and electrical properties of Cu/W-N/SiOF multilevel interconnect

YongTae Kim, Dong Joon Kim, Seoghyeong Lee, Young K. Park, Ik-Soo Kim, Jong-Wan Park

Author Affiliations +

Proceedings Volume 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing; (1999) https://doi.org/10.1117/12.346918
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom

Abstract

Effect of plasma enhanced chemical vapor deposition W-N diffusion barrier on characteristics of Cu based multilevel interconnect with fluorine doped silicon oxide (SiOF) was investigated. AFM results show that surface roughness of Cu film on the SiOF/Si increases 7.27 angstrom to 78.82 angstrom, whereas that of the Cu on the W-N/SiOF/Si, exhibiting smoother surface, increases from 12.49 to 45.31 angstrom after annealing at 500 degrees C for 30 min. Also, the resistivity of Cu/W-N/SiOF/Si system is lower than that of Cu/SiOF/Si after post-annealing. The stress evolution during the annealing at 200-500 degrees C reveals that the Cu and SIOF films have tensile stresses and the W-N film has low compressive stress. Therefore, Cu/W-N/SiOF/Si interconnect has lower tensile than that of Cu/SiOF/Si due to the low compressive stress of the W-N. C-V measurements show that in the Cu/SiOF/Si capacitor the threshold voltage shifts to -0.5 V after annealing at 500 degree C for 30 min. These results mean that the Cu atoms are diffused into the SiOF after post annealing and these Cu atoms act as positive ions in the SiOF. However, in the Cu/W-N/SiOF/Si the W-N prevents the diffusion of Cu atoms into the SiOF and the out diffusion of F from the SiOF.

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YongTae Kim, Dong Joon Kim, Seoghyeong Lee, Young K. Park, Ik-Soo Kim, and Jong-Wan Park "Effects of PECVD W-N diffusion barrier on thermal stress and electrical properties of Cu/W-N/SiOF multilevel interconnect", Proc. SPIE 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing, (27 April 1999); https://doi.org/10.1117/12.346918

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KEYWORDS

Thin films

Copper

Annealing

Diffusion

Chemical species

Plasma enhanced chemical vapor deposition

Fluorine

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