Paper
5 March 1999 Overheated femtosecond plasma in highly porous silicon
M. S. Dzhidzhoev, S. A. Gavrilov, Vyacheslav M. Gordienko, P. M. Mikheev, Andrey B. Savel'ev, A. A. Shashkov, T. M. Vlasov, R. V. Volkov
Author Affiliations +
Proceedings Volume 3735, ICONO '98: Ultrafast Phenomena and Interaction of Superstrong Laser Fields with Matter: Nonlinear Optics and High-Field Physics; (1999) https://doi.org/10.1117/12.341473
Event: ICONO '98: Laser Spectroscopy and Optical Diagnostics: Novel Trends and Applications in Laser Chemistry, Biophysics, and Biomedicine, 1998, Moscow, Russian Federation
Abstract
We present results on plasma formation in porous silicon (cluster like solid with mean cluster size of 3 nm, mean density 0.1 - 0.2 of crystalline silicon) by femtosecond laser pulses at intensity above 10 TW/cm2. We deduced hot electron temperature as high as 8 keV and fast ions of at least 2 MeV energy.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. S. Dzhidzhoev, S. A. Gavrilov, Vyacheslav M. Gordienko, P. M. Mikheev, Andrey B. Savel'ev, A. A. Shashkov, T. M. Vlasov, and R. V. Volkov "Overheated femtosecond plasma in highly porous silicon", Proc. SPIE 3735, ICONO '98: Ultrafast Phenomena and Interaction of Superstrong Laser Fields with Matter: Nonlinear Optics and High-Field Physics, (5 March 1999); https://doi.org/10.1117/12.341473
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KEYWORDS
Plasma

Silicon

Ions

Femtosecond phenomena

Fusion energy

Hard x-rays

Semiconductor lasers

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