Temperature dependence of energy bandgap of Zn1-xMgxSe strained epitaxial layers grown on GaAs

Adam Gapinski; Waclaw Bala

doi:10.1117/12.344709

8 April 1999 Temperature dependence of energy bandgap of Zn_1-xMg_xSe strained epitaxial layers grown on GaAs

Adam Gapinski, Waclaw Bala

Proceedings Volume 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (1999) https://doi.org/10.1117/12.344709
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

Using non-destructive optical methods we determined the bandgap energies for strained epitaxial layers of Zn_1-xMg_xSe on GaAs. Molecular beam epitaxy method for growing the samples with different magnesium concentrations has been used. We compared experimental results with equation based on the Hill's theory, which describes the theoretical bandgap changes with composition z for ternary alloy. The nonlinear dependence of energy bandgap on composition is expressed by bowing parameter. The temperature dependence of bandgap energy in the range from 10 K up to the room temperature was also investigated. Semiempirical Varshni's formula to describe this dependence has been used.

Citation Download Citation

Adam Gapinski and Waclaw Bala "Temperature dependence of energy bandgap of Zn_1-xMg_xSe strained epitaxial layers grown on GaAs", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344709

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