Growth of high-quality GaN and AlxGa1-xN layers by an MOVPE technique

Regina Paszkiewicz; Ryszard Korbutowicz; D. Radziewicz; Marek Panek; Bogdan Paszkiewicz; J. Kozlowski; Boguslaw Boratynski; Marek J. Tlaczala

doi:10.1117/12.344729

8 April 1999 Growth of high-quality GaN and Al_xGa_1-xN layers by an MOVPE technique

Regina Paszkiewicz, Ryszard Korbutowicz, D. Radziewicz, Marek Panek, Bogdan Paszkiewicz, J. Kozlowski, Boguslaw Boratynski, Marek J. Tlaczala

Author Affiliations +

Proceedings Volume 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (1999) https://doi.org/10.1117/12.344729
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

Al_xGa_1-xN layers with 0.02 xGa_1-xN layer grown on it were evaluated by high resolution X-ray measurements, their surface morphology was observed with SEM and Nomarski optical microscope. Electrical properties of the layers were determined by C-V measurements performed at 100 kHz and 1 MHz using mercury probes. The aluminum incorporation into the solid phase during the growth process has been studied. As a result high quality Al_xGa_1-xN/GaN layers for electronic application have been deposited.

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Regina Paszkiewicz, Ryszard Korbutowicz, D. Radziewicz, Marek Panek, Bogdan Paszkiewicz, J. Kozlowski, Boguslaw Boratynski, and Marek J. Tlaczala "Growth of high-quality GaN and Al_xGa_1-xN layers by an MOVPE technique", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344729

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