Carrier lifetime in Hg1-xCdxTe grown by molecular beam epitaxy

Aleksander V. Voitsekhovskii; Yu. A. Denisov; Andrej P. Kokhanenko; N. A. Kulchitskii

doi:10.1117/12.344750

8 April 1999 Carrier lifetime in Hg_1-xCd_xTe grown by molecular beam epitaxy

Aleksander V. Voitsekhovskii, Yu. A. Denisov, Andrej P. Kokhanenko, N. A. Kulchitskii

Proceedings Volume 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (1999) https://doi.org/10.1117/12.344750
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

Carrier lifetimes in Hg_1-xCd_xTe (x equals 0.195 - 0.230) structures grown by molecular beam epitaxy are presented. The carrier lifetimes have been determined from photoconductivity decay after excitation with radiation pulse at various wavelength. It is clearly shown that borders of epitaxial layers influence their photoelectrical properties.

Citation Download Citation

Aleksander V. Voitsekhovskii, Yu. A. Denisov, Andrej P. Kokhanenko, and N. A. Kulchitskii "Carrier lifetime in Hg_1-xCd_xTe grown by molecular beam epitaxy", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344750

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