Readout device processing electronics for IR linear and focal plane arrays

Fiodor F. Sizov; Yurii P. Derkach; Yu. G. Kononenko; Vladimir P. Reva

doi:10.1117/12.354581

26 July 1999 Readout device processing electronics for IR linear and focal plane arrays

Fiodor F. Sizov, Yurii P. Derkach, Yu. G. Kononenko, Vladimir P. Reva

Proceedings Volume 3698, Infrared Technology and Applications XXV; (1999) https://doi.org/10.1117/12.354581
Event: AeroSense '99, 1999, Orlando, FL, United States

Abstract

Silicon read-out devices with input direct injection and buffered direct injection circuits and charge coupled devices (CCD) multiplexers to be used with n⁺-p- or p⁺-n-photovoltaic (PV) multielement arrays were designed, manufactured and tested in T equals 77-300 K temperature temperature region. Into these read-out devices were incorporated the testing switches which attach the sources of direct injection transistors to the common load resistors to imitate the output signal of mercury cadmium telluride photodiodes. The silicon read-out devices for 2 X 64 n⁺-p- or p(superscript +_{n- linear arrays and n(superscript +}-p-2 X 4 X 128 time delay and integration arrays with skimming and partitioning functions were manufactured by n- or p-channel MOS technology with buried channel CCD register. The designed CCD readout devices are driven with four- or two-phase clock pulses.

Citation Download Citation

Fiodor F. Sizov, Yurii P. Derkach, Yu. G. Kononenko, and Vladimir P. Reva "Readout device processing electronics for IR linear and focal plane arrays", Proc. SPIE 3698, Infrared Technology and Applications XXV, (26 July 1999); https://doi.org/10.1117/12.354581

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