Paper
26 July 1999 New technological development for far-infrared bolometer arrays
Patrick Agnese, Christophe Buzzi, Patrice Rey, Louis Rodriguez, Jean-Luc Tissot
Author Affiliations +
Abstract
CEA.S/DAPNIA/DSM and LETI/CEA.S are developing since 1996 a new technology for the realizing of far IR bolometer arrays sensitive in submillimeter wavelength range. The operating temperature is 0.3 Kelvin. Microtechnologies on silicon and flip/chip techniques are used for the detector fabrication and CMOS technology is used for the multiplexer and the readout integrated circuit. We present the concept that we have defined for the focal pane architecture and the readout principle design for 16 X 16 or 32 X 32 array. The first experimental result obtained on optical, electrical and thermal parameters are presented.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Patrick Agnese, Christophe Buzzi, Patrice Rey, Louis Rodriguez, and Jean-Luc Tissot "New technological development for far-infrared bolometer arrays", Proc. SPIE 3698, Infrared Technology and Applications XXV, (26 July 1999); https://doi.org/10.1117/12.354530
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CITATIONS
Cited by 17 scholarly publications.
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KEYWORDS
Silicon

Bolometers

Absorption

Multiplexers

Thermography

Far infrared

Sensors

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