0.18-um lithography strategies: 248-nm DUV step-and-scanner and advanced chemical amplified resist

Qunying Lin; Alex Tsun-Lung Cheng; Wei Wen Ma; John J.J. Cheng

doi:10.1117/12.354299

26 July 1999 0.18-μm lithography strategies: 248-nm DUV step-and-scanner and advanced chemical amplified resist

Qunying Lin, Alex Tsun-Lung Cheng, Wei Wen Ma, John J.J. Cheng

Proceedings Volume 3679, Optical Microlithography XII; (1999) https://doi.org/10.1117/12.354299
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

Optical lithography is one of the most fundamental technologies for 0.18micrometers development. At tighter critical dimension (CD) control and stringent design rules are required, 248nm DUV step and scanner exposure tool becomes major equipment for 0.18micrometers lithography process because of its tighter CD and overlay control and better image quality. Meanwhile, various types of advanced chemical amplified photoresist which have been designed for 0.18micrometers geometry are also available for R and D purpose or prototype usage. In this paper, we present here the evaluation result of ASML 5500/500 step and scanner system for 0.18micrometers line and space and contact hole with Shipley's new photoresist UV70 and UV90. Different NA/PC settings for both conventional and annular illuminations were selected to test on process margins, iso and dense bias and CD uniformity. Optimum NA/PC settings were obtained for 0.18micrometers design rules. The results showed that with new resist UV70, UDOF of larger than 0.60micrometers was achievable at the optimum NA/PC setting for 0.18micrometers line and space. With new resist UV90, UDOF of 1.1 micrometers can be obtained for 0.22micrometers dense contact hole. Furthermore, as a comparison study, inorganic oxynitride (SiON) BARC and new generation organic BARC are applied separately to suppress swing ratio and substrate reflectivity. The UDOF for inorganic BARC is slightly larger than organic BARC process. The advantage of conformability in SiON BARC gives better pattern transfer CD control. In summary, step and scan system with new photoresist can extend photolithography technology to 0.18micrometers with manufacturable process.

Citation Download Citation

Qunying Lin, Alex Tsun-Lung Cheng, Wei Wen Ma, and John J.J. Cheng "0.18-μm lithography strategies: 248-nm DUV step-and-scanner and advanced chemical amplified resist", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354299

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available