Paper
23 March 1999 Photosensitivity of As-S-based chalcogenide photoresists in the recording of relief phase holograms
Rudolf R. Gerke, Mikhail D. Mikhailov, Igor Y. Yusupov
Author Affiliations +
Proceedings Volume 3638, Holographic Materials V; (1999) https://doi.org/10.1117/12.342812
Event: Electronic Imaging '99, 1999, San Jose, CA, United States
Abstract
The photosensitivity of AsxSb(Ge)yS100-x-y (x equals 35 - 45, y equals 0 - 6) films to light with wavelength 488 nm was investigated. The value of photosensitivity was quantified using the results of chemical etching in amine solutions for as-deposited and exposed films. It was found the exposure required to obtain the optimal relief depth, which is from 0.1 to 0.3 micrometer for holographic gratings, decreases with both sulfur and antimony content from about 2 J/cm2 for As2S3 to about 0.3 J/cm2 for As30Sb4S66. The photosensitivity of the Ge doped films is sharp decreased with Ge content. A model of effect of additives on the change of dissolution kinetics was proposed. It is based on the consideration of a photopolymerization of films leading to the formation of the insoluble network of AsS3/2 structural units.
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Rudolf R. Gerke, Mikhail D. Mikhailov, and Igor Y. Yusupov "Photosensitivity of As-S-based chalcogenide photoresists in the recording of relief phase holograms", Proc. SPIE 3638, Holographic Materials V, (23 March 1999); https://doi.org/10.1117/12.342812
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KEYWORDS
Arsenic

Etching

Antimony

Chalcogenides

Germanium

Holograms

Absorption

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