Effect of thermal annealing on the band-edge absorption spectrum of arsenic-ion-implanted GaAs

Gong-Ru Lin; Ci-Ling Pan

doi:10.1117/12.344577

7 April 1999 Effect of thermal annealing on the band-edge absorption spectrum of arsenic-ion-implanted GaAs

Gong-Ru Lin, Ci-Ling Pan

Proceedings Volume 3629, Photodetectors: Materials and Devices IV; (1999) https://doi.org/10.1117/12.344577
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

We report the effect of annealing temperature on the near bandgap transmittance, absorption coefficient, as well as the evolution of shallow-level defects of arsenic-ion-implanted GaAs (referred as GaAs:As⁺) by using Fourier transform infrared spectroscopy. By either fitting the absorption curve with A(hv-E_g)^1/2 or extrapolating the ((alpha) hv)² curve to the abscissa, the blue shift of bandgap energy of RTA-annealed GaAs:As⁺ samples was found to increase from 1.35 eV (T_a equals 300 degrees Celsius) to 1.41 eV (T_a equals 800 degrees Celsius). The slightly perturbed absorption spectra at near bandgap region interpret that there are still a large amount of near-bandedge defects continuously distributed in the RTA-annealed GaAs:As⁺ samples. The diminishing of shallow-level defects with at higher annealing temperatures was also observed via the derivative absorption spectra.

Citation Download Citation

Gong-Ru Lin and Ci-Ling Pan "Effect of thermal annealing on the band-edge absorption spectrum of arsenic-ion-implanted GaAs", Proc. SPIE 3629, Photodetectors: Materials and Devices IV, (7 April 1999); https://doi.org/10.1117/12.344577

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