Generation of THz electrical signals from nanostructures

Taro Itatani; Tadashi Nakagawa

doi:10.1117/12.349289

24 May 1999 Generation of THz electrical signals from nanostructures

Taro Itatani, Tadashi Nakagawa

Proceedings Volume 3624, Ultrafast Phenomena in Semiconductors III; (1999) https://doi.org/10.1117/12.349289
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

We have fabricated vertical and in-plane nano-structures and measured THz signals from these structures. The vertical nano-structures have been fabricated by molecular beam epitaxy in a p-i-n diode. A superlattice structure is located in an i-region of the p-i-n diode. Carriers are photo-excited in the superlattice and accelerated by a built-in potential. The radiation was measured through a free-space electro-optic sampling, and shows rather strong radiation compared to the radiation from the bulk GaAs. The in-plane nano-structures have also fabricated as a photoconductive switch by micro-anodization process. The gap for the photoconductive switch is covered with a transparent insulator which realizes high bias voltage and ultrafast response. We also introduced current block layer under photo-absorbing layer to reduce slow component of current, which are caused by carriers excited deep inside the substrate. The ultrafast response was measured by an electro-optic sampling, and the slow component of the signal has dramatically reduced by this structure.

Citation Download Citation

Taro Itatani and Tadashi Nakagawa "Generation of THz electrical signals from nanostructures", Proc. SPIE 3624, Ultrafast Phenomena in Semiconductors III, (24 May 1999); https://doi.org/10.1117/12.349289

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