Semiconductor laser array fabricated by Nd:YAG laser-induced quantum well intermixing

Jan J. Dubowski; G. Marshall; Yan Feng; Philip J. Poole; Charles Lacelle; Joan E. Haysom; N. Sylvain Charbonneau; Margaret Buchanan

doi:10.1117/12.352683

15 July 1999 Semiconductor laser array fabricated by Nd:YAG laser-induced quantum well intermixing

Jan J. Dubowski, G. Marshall, Yan Feng, Philip J. Poole, Charles Lacelle, Joan E. Haysom, N. Sylvain Charbonneau, Margaret Buchanan

Author Affiliations +

Proceedings Volume 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV; (1999) https://doi.org/10.1117/12.352683
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Selective area CW Nd:YAG laser annealing of GaInAsP/InP quantum well (QW) structures has been investigated as a possible route towards the fabrication of monolithically integrated photonic circuits. Laser irradiation of a 5 QW laser structure, originally designed to yield lasers emitting at 1.5 micrometers , yielded material having a continuously changing band-gap ranging from 1.5 to 1.38 micrometers over the distance of about 3 mm. Bars with arrays of broad area lasers, having lengths from 300 to 600 micrometers , were fabricated form the processed materials. An individual bar comprised lasers operating typically between 1.4 and 1.5 micrometers . The lasers showed stable threshold current density and quantum efficiency as function of the operating wavelength. This demonstration indicates that the applied technology has the potential to realize the cost-effective fabrication of advanced photonic devices and photonic integrated circuits.

Citation Download Citation

Jan J. Dubowski, G. Marshall, Yan Feng, Philip J. Poole, Charles Lacelle, Joan E. Haysom, N. Sylvain Charbonneau, and Margaret Buchanan "Semiconductor laser array fabricated by Nd:YAG laser-induced quantum well intermixing", Proc. SPIE 3618, Laser Applications in Microelectronic and Optoelectronic Manufacturing IV, (15 July 1999); https://doi.org/10.1117/12.352683

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