Narrowband and wideband coherent THz source generation using three-wave difference frequency mixing and cross-Reststrahlen band dispersion compensation in ultrahigh-purity III-V semiconductor crys

Gregory S. Herman; Norman P. Barnes; Nasser Peyghambarian

doi:10.1117/12.347115

29 April 1999 Narrowband and wideband coherent THz source generation using three-wave difference frequency mixing and cross-Reststrahlen band dispersion compensation in ultrahigh-purity III-V semiconductor crys

Gregory S. Herman, Norman P. Barnes, Nasser Peyghambarian

Author Affiliations +

Proceedings Volume 3617, Terahertz Spectroscopy and Applications; (1999) https://doi.org/10.1117/12.347115
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

We discuss the Cross-Reststrahlen band phasematching technique for narrow-band three-wave interactions. In GaP, assuming a maximum practical crystal length of 100 millimeters, the calculations predict that with a source wavelength of 0.965 micrometers, a tuning range of greater than 50 GHz is possible around the perfectly phasematched 3.0 THz center frequency. When GaP is pumped with a source wavelength of 1.000 micrometers, the coherence length is at least 100 mm for a frequency range of greater than 600 GHz around the perfectly phasematched 630 GHz center frequency. High Resistivity GaP is available in cylindrical boules that are larger than 50 millimeters in diameter and 75 millimeters in length. GaP has a bandgap cutoff wavelength in the Visible at 0.55 micrometers and a simple phonon absorption spectrum with a single fundamental absorption at approximately 27 micrometers, which indicates a potential for high transmission in both the NIR and FIR. Any remaining FIR absorption can be attributed to free electron absorption and two phonon absorption processes. In this paper, we report new measurements of GaP regarding FIR absorption, optical damage threshold and optical quality. These measurements indicate that undoped, high-resistivity GaP single crystal can be used to generate THz waves.

Citation Download Citation

Gregory S. Herman, Norman P. Barnes, and Nasser Peyghambarian "Narrowband and wideband coherent THz source generation using three-wave difference frequency mixing and cross-Reststrahlen band dispersion compensation in ultrahigh-purity III-V semiconductor crys", Proc. SPIE 3617, Terahertz Spectroscopy and Applications, (29 April 1999); https://doi.org/10.1117/12.347115

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available