Bandgaps and band offsets in strain-compensated InGaAs/InGaAsP multiple quantum wells

Chunsheng Ma; Zhi Jin; Fengshou Tian; Ningguo Yang; Shuren Yang; Shiyong Liu

doi:10.1117/12.319622

19 August 1998 Bandgaps and band offsets in strain-compensated InGaAs/InGaAsP multiple quantum wells

Chunsheng Ma, Zhi Jin, Fengshou Tian, Ningguo Yang, Shuren Yang, Shiyong Liu

Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319622
Event: Photonics China '98, 1998, Beijing, China

Abstract

In terms of the parameter interpolation principle, calculations are performed for bandgaps and band offsets in strain-compensated In_zGa_1-zAs/In_xGa_1-xAs_yP_1-y multiple quantum well structures on InP. Relations between strains and material compositions in In_zGa_1-zAs wells and In_xGa_1-xAs_yP_1-y barriers are analyzed, and relative ranges of strains are evaluated. Bandgaps of In_zGa_1-zAs wells and In_xGa_1-xAs_yP_1-y barriers for heavy- and light-holes are studied, and relative ranges of bandgaps are estimated. Dependence of band offsets of conduction band and valence band for heavy- and light-holes on strain compensation between In_zGa_1-zAs wells and In_xGa_1-xAs_yP_1-y barriers is investigated, and variation of band offsets versus strain compensation is discussed. The computed results show that strains, bandgaps and band offsets are functions of material compositions, strain compensation changes the band offsets, and hence modifies the band structures and improves the features of strain- compensated multiple quantum well optoelectronic devices.

Citation Download Citation

Chunsheng Ma, Zhi Jin, Fengshou Tian, Ningguo Yang, Shuren Yang, and Shiyong Liu "Bandgaps and band offsets in strain-compensated InGaAs/InGaAsP multiple quantum wells", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); https://doi.org/10.1117/12.319622

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