Yield-modeling accuracy requirements for 300-mm processing

Daren L. Dance; Christopher W. Long

doi:10.1117/12.324382

28 August 1998 Yield-modeling accuracy requirements for 300-mm processing

Daren L. Dance, Christopher W. Long

Proceedings Volume 3510, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis IV; (1998) https://doi.org/10.1117/12.324382
Event: Microelectronic Manufacturing, 1998, Santa Clara, CA, United States

Abstract

Semiconductor yield models and the targets based on these models often differ from actual yield performance. The purpose of this study is to investigate yield modeling accuracy risks and requirements for 180, 150, and 130 nm technologies. Using a 300 nm CMOS process with 4 layers of copper and conventional SiO₂ dielectric, this analysis focuses on several significant risk costs including building cost, equipment cost, floor space cost, operating cost, scrap cost, and unused capacity cost. Our analysis resulted in several observations about yield modeling error.

Citation Download Citation

Daren L. Dance and Christopher W. Long "Yield-modeling accuracy requirements for 300-mm processing", Proc. SPIE 3510, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis IV, (28 August 1998); https://doi.org/10.1117/12.324382

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available