Scanning capacitance microscope, an in-line nondestructive technique for SiO2 characterization

F. Bordoni; Rosario De Tommasis; A. Di Giacomo; L. Fasciani; Giuseppe Moccia

doi:10.1117/12.324418

27 August 1998 Scanning capacitance microscope, an in-line nondestructive technique for SiO₂ characterization

F. Bordoni, Rosario De Tommasis, A. Di Giacomo, L. Fasciani, Giuseppe Moccia

Proceedings Volume 3509, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II; (1998) https://doi.org/10.1117/12.324418
Event: Microelectronic Manufacturing, 1998, Santa Clara, CA, United States

Abstract

The current trend in the semiconductor industries is to move the reliability tests usually performed at he end of the process flow, towards in the in line monitors. This need opens a new strategic direction for the scanning probe microscopy, permitting to avoid dedicated sample preparation. Among the examples of SPM-scanning tunneling microscope, near-field scanning optical microscope, atomic force microscope, scanning thermal microscope and scanning capacitance microscope - some of them are still under investigation. In this paper a new scanning capacitance microscope able to perform quantitative local in-situ monitor of the silicon oxide properties is being established. The test samples used in this work, were p- doped silicon wafers with a 10 nm oxide layer thermally grown. The tip of the microscope, brought into contact with the sample surface, is biased with a voltage stairs, so local frequency-voltage (F-V) measurements can be performed. Another configuration of the equipment, which allows to measure the flat band voltage of the MOS capacitor as the peak of the derivative F-V curves, is also presented. The measurements methods described above have been compared with standard C-V measurements showing an alternative way to investigate on the presence of defects inside SiO₂ without requiring any sample preparation.

Citation Download Citation

F. Bordoni, Rosario De Tommasis, A. Di Giacomo, L. Fasciani, and Giuseppe Moccia "Scanning capacitance microscope, an in-line nondestructive technique for SiO₂ characterization", Proc. SPIE 3509, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II, (27 August 1998); https://doi.org/10.1117/12.324418

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available