Optical active gallium arsenide probes for scanning probe microscopy

Sven Heisig; W. Steffens; Egbert Oesterschulze

doi:10.1117/12.326832

13 October 1998 Optical active gallium arsenide probes for scanning probe microscopy

Sven Heisig, W. Steffens, Egbert Oesterschulze

Proceedings Volume 3467, Far- and Near-Field Optics: Physics and Information Processing; (1998) https://doi.org/10.1117/12.326832
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

In order to produce microelectromechanical systems on base of gallium arsenide it is necessary to develop novel etching techniques. The conventional dip etching is not suitable to fabricate such systems reliably and with sufficiently small thickness variations. To overcome this problem we used a modified spray etching technique. A comparison between both methods is given.

Citation Download Citation

Sven Heisig, W. Steffens, and Egbert Oesterschulze "Optical active gallium arsenide probes for scanning probe microscopy", Proc. SPIE 3467, Far- and Near-Field Optics: Physics and Information Processing, (13 October 1998); https://doi.org/10.1117/12.326832

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