SCH dependence of linewidth enhancement factor for high-speed 1.55-um multiple quantum well laser diodes

Beomhoan O; Heung-Ro Choo; Hyung Mun Kim; Soon-Ryong Park; Jeong Soo Kim

doi:10.1117/12.328537

29 October 1998 SCH dependence of linewidth enhancement factor for high-speed 1.55-μm multiple quantum well laser diodes

Beomhoan O, Heung-Ro Choo, Hyung Mun Kim, Soon-Ryong Park, Jeong Soo Kim

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Proceedings Volume 3429, Current Developments in Optical Design and Engineering VII; (1998) https://doi.org/10.1117/12.328537
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

The linewidth enhancement factor is the crucial design parameter with others, such as gain and refractive index changes for semiconductor laser diodes (LD). The changes of characteristics are measured according to the variation of the thickness of SCH (Separate Confinement Heterostructure, 1.24 micrometer p-InGaAsP). The gain spectra were obtained from the spontaneous emission for three LD's. The threshold current; I_th were about 15 mA. The optical field profiles for various SCH thickness was calculated from the effective index and transfer matrix method and the corresponding optical confinement factors are compared with the variation of measured (alpha) . It is meaningful to find the SCH thickness, SCH_(Gamma max), of maximum confinement (Gamma) for given LD structure. Although the improvement of the linewidth enhancement factor ((alpha) ) in thicker SCH (greater than SCH_(Gamma max)) has been known, it has not been measured for thin SCH (less than SCH_(Gamma max)). Here, we compare the measured linewidth enhancement factors of three DFB-LD's with different SCH thickness of 500, 750, and 1000 angstrom, which are all smaller than the SCH_(Gamma max) for given structure. It is shown that (alpha) would be improved as SCH thickness increases up to 1500 angstrom (approximately SCH_(Gamma max)) for given structure if other design parameters permit.

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Beomhoan O, Heung-Ro Choo, Hyung Mun Kim, Soon-Ryong Park, and Jeong Soo Kim "SCH dependence of linewidth enhancement factor for high-speed 1.55-μm multiple quantum well laser diodes", Proc. SPIE 3429, Current Developments in Optical Design and Engineering VII, (29 October 1998); https://doi.org/10.1117/12.328537

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KEYWORDS

Semiconductor lasers

Quantum wells

Active optics

Photons

Refractive index

Heterojunctions

Telecommunications

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