Raman and photoluminescence investigation of ZnxCd1-xSe thin film under high pressure

Wen Shen Li; Z. X. Shen; De Zen Shen; Xiwu Fan

doi:10.1117/12.323752

23 September 1998 Raman and photoluminescence investigation of Zn_xCd_1-xSe thin film under high pressure

Wen Shen Li, Z. X. Shen, De Zen Shen, Xiwu Fan

Proceedings Volume 3424, Inorganic Optical Materials; (1998) https://doi.org/10.1117/12.323752
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

Micro-Raman and photoluminescence (PL) studies of Zn_xCd_1-xSe (x equals 0.68) thin film have been carried out under high pressure at room temperature. In the PL spectra, the PL energy gap shift exhibits sublinearity with pressure and a least-square fitting to the experimental data gives a pressure coefficients of (alpha) equals 0.083 eV/GPa and (beta) equals 0.0052 eV/GPa². The second-order pressure coefficient (beta) of the energy gap obtained experimentally is anomalously large and its origin was explained by alloy potential fluctuation with increasing pressure. In the Raman spectra, the first-order pressure coefficient was also calculated by least-square fit. The low energy tail of the longitudinal-optical phonon was found to develop with pressure for the first time, and the line shape change with pressure is interpreted in terms of a `spatial correlation' model.

Citation Download Citation

Wen Shen Li, Z. X. Shen, De Zen Shen, and Xiwu Fan "Raman and photoluminescence investigation of Zn_xCd_1-xSe thin film under high pressure", Proc. SPIE 3424, Inorganic Optical Materials, (23 September 1998); https://doi.org/10.1117/12.323752

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