Investigations and modeling of physical processes in inorganic resists for use in UV and laser lithography

Sergey A. Kostyukevych

doi:10.1117/12.323755

23 September 1998 Investigations and modeling of physical processes in inorganic resists for use in UV and laser lithography

Sergey A. Kostyukevych

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Proceedings Volume 3424, Inorganic Optical Materials; (1998) https://doi.org/10.1117/12.323755
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

The applications of chalcogenide glasses (CG) and the structures on their base in the microlithography are reviewed. In brief are described the properties of high resolution inorganic thin film structures CG-Ag and CG layers. The properties of such resists and peculiarities of UV and laser lithography were investigated. Study of photostimulated processes in inorganic resists are of considerable interest both for fundamental science and practical applications. The photodoping effect is most typically manifested in the Ag-As₂S₃ system. In most studies this structure is used as a model one. Surface plasmon resonance was applied to study the initial stages of kinetics of the photostimulated interaction in an inorganic resist (Ag-As₂S₃ system). This method allows to measure the optical constants of ultrathin (0.5 up to 100 nm) films and to observe their structural changes and thickness evolution in real time scale. From the results obtained it can be concluded that during the photoexposure process the Ag-As₂S₃ system can be considered as a four-layer system: the first layer-silver, the second one- silver sulfide, the third one-As₂S₃ photodoped with silver, the fourth one-the As₂S₃ layer that has not interacted with silver yet. During the exposure process the intermediate silver sulfide layer thickness remains practically unchanged. Using the As₂S₃ or As-S-Se layers the minimal width of lines 170 nm was obtained, under the exposure wavelength 532 nm.

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Sergey A. Kostyukevych "Investigations and modeling of physical processes in inorganic resists for use in UV and laser lithography", Proc. SPIE 3424, Inorganic Optical Materials, (23 September 1998); https://doi.org/10.1117/12.323755

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