Formation mechanism of defects in annealed InP

Yujie Han; Xunlang Liu; Jinghua Jiao; Lanying Lin

doi:10.1117/12.311026

22 June 1998 Formation mechanism of defects in annealed InP

Yujie Han, Xunlang Liu, Jinghua Jiao, Lanying Lin

Proceedings Volume 3419, Optoelectronic Materials and Devices; 341915 (1998) https://doi.org/10.1117/12.311026
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan

Abstract

Dynamical formation mechanism of defects in the annealed nominally undoped semi-insulating InP obtained by high pressure, high temperature annealing of high purity materials is proposed. Local vibrational modes in tenths of InP samples reveal clearly existence of complexes related to hydrogen. Complexes of vacancy at indium site with one to four hydrogen atoms and isolated hydrogen or hydrogen dimers, complexes of hydrogen with various impurities are investigated by FTIR. Hydrogen can act as an actuator for generation of antistructure defects. Fully hydrogenated indium vacancy dissociates leaving large lattice relaxation behind, deep donors, many larger complexes involving phosphorus at indium site and isolated hydrogen defects are created in nominally undoped InP after annealing. Also created are acceptor levels such as vacancy at indium site. Carrier charge compensation mechanism in nominally undoped InP upon annealing at high temperature is given. Microscopic models of hydrogen related defects are given. Structural, electronic and vibrational properties of LVMs related to hydrogen as well as their temperature effect are discussed.

Citation Download Citation

Yujie Han, Xunlang Liu, Jinghua Jiao, and Lanying Lin "Formation mechanism of defects in annealed InP", Proc. SPIE 3419, Optoelectronic Materials and Devices, 341915 (22 June 1998); https://doi.org/10.1117/12.311026

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