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22 June 1998 Growth shape control of group-III nitrides by selective-area MOVPE
Naoki Kobayashi, Tetsuya Akasaka, Seigo Ando, Masami Kumagai
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Proceedings Volume 3419, Optoelectronic Materials and Devices; 341901 (1998) https://doi.org/10.1117/12.310989
Event: Asia Pacific Symposium on Optoelectronics '98, 1998, Taipei, Taiwan
Abstract
In the selective area metal-organic vapor phase epitaxy, III-V micro-crystals surrounded by low-index crystallographic facets are grown on the open area of the masked substrate. The shape of grown crystal can be controlled by changing the growth condition and/or the mask pattern. On the B substrate, highly symmetrical tetrahedron, hexagonal and regular triangle prisms can be grown in a micrometers scale. The application to micro-lasers called 'facet laser' makes the most use of facet growth because flat and damage-free vertical-facets are best fitted to the laser resonator. Even in group III nitrides, which are extremely hard and chemically inactive, we succeeded in the growth of GaN hexagonal micro prisms and observed the optically pumped room-temperature lasing by ring-cavity mode.
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Naoki Kobayashi, Tetsuya Akasaka, Seigo Ando, and Masami Kumagai "Growth shape control of group-III nitrides by selective-area MOVPE", Proc. SPIE 3419, Optoelectronic Materials and Devices, 341901 (22 June 1998); https://doi.org/10.1117/12.310989
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KEYWORDS
Crystals
Laser resonators
Prisms
Gallium nitride
Optical pumping
Vapor phase epitaxy
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